IXTT170N10P

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTT170N10P IXTQ170N10P IXTK170N10P Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264 & TO-3P) TO-268 TO-3P TO-264 Maximum Ratings 100 V 100 V ± 20 V ± 30 V 170 A 160 A 350 A 60 A 2 J 10 V/ns 715 W -55 to +175 °C +175 °C -55 to +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4.0 g 5.5 g 10.0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 VGS = 15V, ID = 350A Characteristic Values Min. Typ. Max. 100 V 2.5 5.0 V ±100 nA 25 μA 250 μA 9 mΩ 7 mΩ VDSS = 100V ID25 = 170A ≤ RDS(on) 9mΩ TO-268 (IXTT) G S Tab TO-3P (IXTQ) G D S Tab TO-264 (IXTK) G D Tab S G = Gate D = Drain S = Source Tab = Drain Features z International Standard Packages z Fast Intrinsic Rectifier z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z Switch-Mode and Resonant-Mode Pow...