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IXGR32N170AH1

IXYS

High Voltage IGBT

Advance Technical Information www.DataSheet4U.com High Voltage IGBT with Diode Electrically Isolated Tab IXGR 32N170AH...



IXGR32N170AH1

IXYS


Octopart Stock #: O-676868

Findchips Stock #: 676868-F

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Advance Technical Information www.DataSheet4U.com High Voltage IGBT with Diode Electrically Isolated Tab IXGR 32N170AH1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 26 A = 5.2 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg FC VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω TC = 25°C Maximum Ratings 1700 1700 ± 20 ± 30 26 17 14 200 ICM = 70 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A A µs W °C °C °C N/lb ~V °C 5 g ISOPLUS247 (IXGR) E153432 G C E ISOLATED TAB C = Collector, G = Gate, E = Emitter Features z Electrically Isolated tab z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Mounting force with clamp 50/60 Hz, 1 minute 22...130/5...30 2500 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 1700 3.0 Note 1 TJ = 125°C 5.0 500 8 ± 100 TJ = 125°C 4.2 4.8 5.2 V V µA mA nA V V BVC...




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