IXFH36N60P

Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet TM IXFH 36N60P IXFT 36N60P IXFK 36N60P VDSS ID25 RDS(on) t rr = 600 V = 36 A ≤ 190 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 36 80 36 50 1.5 20 650 -55 ... +150 150 -55 ... +150 V V V TO-247 (IXFH) G V A A A mJ J V/ns W °C °C °C D S D (TAB) TO-268 (IXTT) Case Style G S D (TAB) TO-264 AA (IXTK) Mounting torque (TO-247 & TO-264) TO-247 TO-268 TO-264 1.13/10 Nm/lb.in. 6 5 10 300 g g g °C G D S (TAB) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C G = Gate S = Source Features D = Drain Tab = Drain Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 100 1000 190 V V nA µA µA mΩ z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10...