IXFV110N10P

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS ID25 RDS(on) = 100 V = 110 A = 15 mΩ www.DataSheet4U.com TO-247 (IXFH) Maximum Ratings 100 100 ± 20 ± 30 110 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V G D V V A A A A mJ J V/ns W °C °C °C °C °C G D S (TAB) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C PLUS220 (IXFV) S D (TAB) PLUS220 SMD-HV G S D (TAB) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque Mounting Force (TO-247) (PLUS220) 300 250 1.13/10 Nm/lb.in. 11..65 / 2.5..15 6 5 N/lb g g G = Gate S = Source D = Drain TAB = Drain TO-247 PLUS220 & PLUS220 SMD Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 100 2.5 5.0 ±100 25 250 15 V V nA µA µA mΩ Features z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect VGS = ...