IXEH 25N120 IXEH 25N120D1
com
NPT3 IGBT
IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2. 6 V
C
C
TO-247 AD
G
G
E
E
G C E C (TAB)
IXEH 25N120
IXEH 25N120D1
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 68 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 36 24 60 VCES 10 200 V V A A A µs W
Features • NPT3 IGBT - positive temperature coefficient of saturation voltage for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • optional HiPe...