512K x 8 (4-MBIT) DYNAMIC RAM
IS41C85125A IS41LV85125A
512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
FEATURES
• • • • Fast access and cycle time T...
Description
IS41C85125A IS41LV85125A
512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
FEATURES
Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: 1024 cycles/16 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden JEDEC standard pinout Single power supply: -- 5V ± 10% (IS41C85125A) -- 3.3V ± 10% (IS41LV85125A) Lead-free available
ISSI
APRIL 2005
®
www.DataSheet4U.com
DESCRIPTION
The ISSI IS41C85125A and IS41LV85125A are 512,288 x 8bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1024 random accesses within a single row with access cycle time as short as 12 ns per 8-bit word. These features make the IS41C85125A and the IS41LV85125A ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications. The IS41C85125A and IS41LV85125A are available in a 28-pin, 400-mil SOJ package.
KEY TIMING PARAMETERS
Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. Fast Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -60 60 15 30 40 110 Unit ns ns ns ns ns
PIN CONFIGURATION 28-Pin SOJ
VCC I/O0 I/O1 I/O2 I/O3 NC WE RAS A9 A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
GND I/O7 I/O6 I/O5 I/O4 CAS OE NC A8 A7 A6 A5 A4 GND
PIN DESCRIPTIONS
A0-A9 I/O0-I/O7 WE OE RAS CAS VCC GND NC Address Inputs Data Inputs/Outputs Write Enable Output Enab...
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