Power MOSFET
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFK 120N25P IXFX 120N25P
VDSS = ID25 = RDS(on) = trr <
ww...
Description
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFK 120N25P IXFX 120N25P
VDSS = ID25 = RDS(on) = trr <
www.DataSheet4U.com
250 V 120 A 24 mΩ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 250 250 ± 20 ± 30 120 75 300 60 60 2.5 10 700 -55 ... +175 175 -55 ... +150 V V V V
TO-264(SP) (IXFK)
G
A A A A mJ J V/ns W °C °C °C °C
D
(TAB) S
PLUS247 (IXFX)
G = Gate S = Source
(TAB) D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-264 PLUS247
300
Features
z z
1.13/10 Nm/lb.in. 10 6 g g
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 250 2.5 5.0 ±200 25 250 19 24 V V nA μA μA mΩ
Advantages
z z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
DS99379(04/05)
IXFK 120N25P IXFX 120N25P
Symbol T...
Similar Datasheet