KTC3770T

SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. KTC3770T EPITAXIAL PLANAR NPN TRANSISTOR www.DataSheet4U.com E FEATURES Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=11dB (f=1GHz). G K B DIM A B 2 C 3 D MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 A F D 1 E F G H I J K L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg 2 RATING 20 12 3 100 0.9 150 -55 150 UNIT C I V V V mA W J L G H J 1. EMITTER 2. BASE 3. COLLECTOR TSM * Package mounted on a ceramic board (600 0.8 ) Marking h FE Rank Lot No. Type Name R ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Output Capacitance Reverse Transfer Capacitance Transition Frequency Insertion Gain Noise Figure SYMBOL ICBO IEBO hFE (Note1) Cob Cre fT |S21e| NF 2 TEST CONDITION VCB=10V, IE=0 VEB=1V, IC=0 VCE=10V, IC=20mA VCB=10V, IE=0, f=1MHz (Note2) VCE=10V, IC=20mA VCE=10V, IC=20mA, f=1GHz VCE=10V, IC=7mA, f=1GHz MIN. 50 5 7.5 - TYP. 0.65 7 11.5 1.1 MAX. 1 1 250 1.0 1.15 2 UNIT A A pF pF GHz dB dB Note 1 : hFE Classification A:50~100, B:80~160, C:125~250. Note 2 : Cre is measured by 3 terminal method with capacitance brid...