K1S3216BCC

K1S3216BCC Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM www.DataSheet4U.com Revision History Revision No. History 1.0 2.0 Revised - Corrected tOH from 5ns to 3ns. Draft Date February 25, 2004 Remark Final September 20, 2004 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 2.0 September 2004 K1S3216BCC 2M x 16 bit Page Mode Uni-Transistor CMOS RAM FEATURES UtRAM www.DataSheet4U.com GENERAL DESCRIPTION The K1S3216BCC is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current. Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 1.7~2.1V Three State Outputs Compatible with Low Power SRAM Support 4 page read mode Package Type: 48-FBGA-6.00x8.00 PRODUCT FAMILY Product Family Operating Temp. Vcc Range Speed (tRC) 70ns Power Dissipation Standby (ISB1, Max.) 100µA Operating (ICC2, Max.) 35mA PKG Type K1S3216BCC-I Industrial(-40~85°C) 1.7~2.1V 48-FBGA-6.00x8.00 PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Clk ...