FLL400IK-2

www.DataSheet4U.com FLL400IK-2 High Voltage - High Power GaAs FET FEATURES E High Output Power: P1dB=46.5dBm(Typ.) E High Gain: G1dB=12.0dB(Typ.) E High PAE: ηadd=46%(Typ.) E Broad Band: 1.8~2.0GHz E Hermetically Sealed Package DESCRIPTION The FLL400IK-2 is a 40 Watt GaAs FET that is specially suited for use in PHS base station amplifier as long term reliability. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 C) Item Symbol Rating Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS PTot Tstg T ch 15 -5 93.7 -65 to +175 175 o o Unit V V W o C o C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 C) Item Symbol Condition Limit DC Input Voltage Forward Gate Current Reverse Gate Current Operating channel temperature VDS IGF IGR Tch o Unit V mA mA o RG=10Ω RG=10Ω 12 <54.4 >-17.4 145 C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C) Limit Item Symbol Condition Min. Typ. Max. Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Unit S V V dBm dB A % o C/W gm Vp VGSO P1dB G1dB Idsr η add Rth VDS=5V,IDS=8.0A VDS=5V,IDS=1.08A IGS=-1.08mA -1.0 -5.0 45.5 11.5 - 9.0 -2.0 46.5 12.0 7.5 46.0 1.3 -3.5 8.5 1.6 Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Thermal Resistance VDD=12V f=1.9GHz IDS(DC)=4A ESD Edition 1.1 Augest 2004 Class II...