isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5885
DESCRIPTION ·High Breakdown Voltage ·Wide Area of Safe...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC5885
DESCRIPTION ·High Breakdown Voltage ·Wide Area of Safe Operation ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Horizontal deflection output for TV, CRT monitor
applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
6
A
IB
Base Current- Continuous
3
A
ICP
Collector Current-Pulse
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
9
A
2 W
30
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC5885
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
hFE
DC Current Gain
IC= 3A; IB= 0.75A
VCB= 1000V; IE= 0 VCB= 1500V; IE= 0
IC= 3A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 3A
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V; f= 0.5MHz
Switching times; Resistive load
tstg
Storage Time
tf
Fall Time
IC= 3A...