PBLS6002D
60 V PNP BISS loadswitch
Rev. 01 — 23 June 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1....
PBLS6002D
60 V
PNP BISS loadswitch
Rev. 01 — 23 June 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor and
NPN Resistor-Equipped
Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package.
1.2 Features
s s s s s Low VCEsat (BISS)
transistor and resistor-equipped
transistor in one package Low threshold voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count
1.3 Applications
s s s s Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment
1.4 Quick reference data
Table 1: Symbol VCEO IC RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) collector-emitter saturation resistance collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio IC = −1 A; IB = −100 mA open base Conditions open base
[1] [2]
Min -
Typ 255
Max −60 −1 340
Unit V A mΩ
TR1;
PNP low VCEsat
transistor
TR2;
NPN resistor-equipped
transistor VCEO IO R1 R2/R1
[1] [2]
3.3 0.8
4.7 1
50 100 6.1 1.2
V mA kΩ
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Philips Semiconductors
PBLS6002D
www.DataSheet4U.com
60 V
PNP BISS loadswitch
2. Pinning information
Table 2: Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 output (...