PBSS5220V

PBSS5220V 20 V, 2 A PNP low VCEsat (BISS) transistor Rev. 01 — 13 June 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications 1.4 Quick reference data Table 1: VCEO IC ICM RCEsat Quick reference data Conditions open base tp ≤ 300 µs IC = −1 A; IB = −100 mA Min Typ 140 Max −20 −2 −4 210 Unit V A A mΩ collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance Symbol Parameter Philips Semiconductors PBSS5220V 20 V, 2 A PNP low VCEsat (BISS) transistor www.DataSheet4U.com 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter 4 6 5 4 3 1, 2, 5, 6 Simplified outline Symbol collector collector 1 2 3 sym030 3. Ordering information Table 3: Ordering information Package Name PBSS5220V Description plastic surface mounted package; 6 leads Version SOT666 Type number 4. Marking Table 4:...