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IXTP2R4N50P

IXYS
Part Number IXTP2R4N50P
Manufacturer IXYS
Description Power MOSFET
Published Jun 12, 2010
Detailed Description PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2R4N50P IXTP2R4N50P Symbol VDSS VDGR VGSS VGSM ID2...
Datasheet PDF File IXTP2R4N50P PDF File

IXTP2R4N50P
IXTP2R4N50P

Overview
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY2R4N50P IXTP2R4N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-220) TO-252 TO-220 Maximum Ratings 500 V 500 V 30 V 40 V 2.
4 A 4.
5 A 2.
4 A 100 mJ 10 V/ns 56 W -55 .
.
.
+150 C 150 C -55 .
.
.
+150 C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in 0.
35 g 3.
00 g Symbol Test ...


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