IXTP1R4N60P

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-251 TO-252 TO-220 Maximum Ratings 600 V 600 V 30 V 40 V 1.4 A 2.1 A 1.4 A 75 mJ 10 V/ns 50 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 0.40 g 0.35 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 25μA VGS(th) VDS = VGS, ID = 25μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 © 2017 IXYS CORPORATION, All Rights Reserved Characteristic Values Min. Typ. Max. 600 V 3.0 5.5 V 50 nA 1 A 20 A 9 VDSS = ID25 =  RDS(on) 600V 1.4A 9 TO-251 (IXTU) G D S TO-252 (IXTY) D (Tab) G S D (Tab) TO-220 (IXTP) GDS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Low QG  Avalanche Rated  Low Package Inductance  Fast Intrinsic Rectifier Advantages  High Power Density  Easy to Mount  Space Savings Applications  DC-DC Converters  Swi...