IXFV36N50P

Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS VDSS ID25 RDS(on) = 500 V = 36 A = 170 mΩ www.DataSheet4U.com TO-247 AD (IXFH) (TAB) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 36 108 36 50 1.5 10 540 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns G W °C °C °C °C °C G S G = Gate S = Source D (TAB) D = Drain TAB = Drain TO-268 (IXTT) G S D (TAB) PLUS220 (IXFV) D S D (TAB) PLUS220SMD (IXFV...S) 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Mounting torque(TO-247) TO-247 TO-268 PLUS220 300 260 Md Weight 1.13/10 Nm/lb.in. 6 5 2 g g g Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 4 mA VDS = VGS, ID = 250μA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ±100 25 250 V V nA μA μA z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ...