PBSS2540E

PBSS2540E 40 V, 500 mA NPN low VCEsat (BISS) transistor Rev. 01 — 4 May 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBS3540E. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) 1.4 Quick reference data Table 1: VCEO IC ICM RCEsat [1] Quick reference data Conditions open base Min IC = 500 mA; IB = 50 mA [1] Symbol Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance Typ 380 Max 40 500 1 500 Unit V mA A mΩ - Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBSS2540E 40 V, 500 mA NPN low VCEsat (BISS) transistor www.DataSheet4U.com 2. Pinning information Table 2: Pin 1 2 3 Pinning Description base emitter collector 1 2 3 1 2 sym021 Simplified outline Symbol 3 3. Ordering information Table 3: Ordering information Package Name PBSS2540E SC-75 Description plastic surface mounted package; 3 leads Version SOT416 Type number 4. Marking Table 4: Marking codes Mar...