PBSS5440D

PBSS5440D 40 V PNP low VCEsat (BISS) transistor Rev. 01 — 27 April 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS4440D 1.2 Features s s s s s Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC) Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation 1.3 Applications s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance t = 1 ms or limited by Tj(max) IC = −6 A; IB = −600 mA [2] Conditions open base [1] Min - Typ 55 Max −40 −4 −15 75 Unit V A A mΩ Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBSS5440D 40 V PNP low VCEsat (BISS) transistor www.DataSheet4U.com 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector 1 2 3 6 5 4 3 4 sym030 Simplified outline Symbol 1, 2, 5, 6 3. Orderi...