IXTP5N60P

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 5N60P IXTP 5N60P VDSS = 600 V ID25 = 5A RDS(on) ≤ 1.7 Ω Symbol V DSS E VDGR VGSS VGSM T ID25 IDM IAR EAR E EAS dv/dt L PD TJ TJM O Tstg T L TSOLD Md S Weight Test Conditions T J = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-220) TO-220 TO-263 B Symbol Test Conditions (TJ = 25°C, unless otherwise specified) O BVDSS VGS = 0 V, ID = 250 μA Maximum Ratings 600 V 600 V TO-263 (IXTA) ± 30 V ± 40 V G S 5 A 10 A TO-220 (IXTP) 5 A 20 mJ 360 mJ 10 V/ns G DS (TAB) (TAB) 100 W -55 ... +150 °C 150 °C -55 ... +150 °C G = Gate S = Source D = Drain TAB = Drain 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 3 g Features Characteristic Values Min. Typ. Max. z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect 600 V V GS(th) V DS = V, GS I D = 50μA Advantages 3.0 5.5 V IGSS VGS = ±30 V, VDS = 0 V ±100 nA z Easy to mount z Space savings I DSS V =V DS DSS VGS = 0 V TJ = 125°C 5 μA z High power density 50 μA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.7 Ω © 2006 IXYS All rights reserved ...