IXTV30N50P

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(on) 500 30 200 V A mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS VDGR VGSS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d FC Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247, TO-3P) Mounting force (PLUS220, PLUS220SMD) PLUS220, PLUS220SMD TO-268 TO-3P TO-247 500 V 500 V ±30 V ±40 V 30 A 75 A 30 A 40 mJ 1.2 J 10 V/ns 460 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 11 65/2.5 15 N/lb. 4 g 5 g 5.5 g 6 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 500 VGS(th) VDS = VGS, ID = 250 µA 3.0 IGSS VGS = ±30 V, VDS = 0 V I DSS V =V DS DSS VGS = 0 V TJ = 125° C RDS(on) VGS = 10 V, ID = 0.5 ID25 165 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % V 5.0 V ±100 nA 25 µA 250 µA 200 m Ω TO-3P (IXTQ) G D S TO-268 (IXTT) G S PLUS220 (IXTV) (TAB) (TAB) GDS (TAB) PLUS220 SMD(IXTV..S) G = Gate S = Source G S (TAB) D = Drain TAB = Drain Features l Int...