SEMICONDUCTOR
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION. FEATURES
High Emitter-Base Voltage : VEBO=25V(Min.) H...
SEMICONDUCTOR
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION. FEATURES
High Emitter-Base Voltage : VEBO=25V(Min.) High Reverse hFE
A1
KTC814U
EPITAXIAL PLANAR
NPN TRANSISTOR
www.DataSheet4U.com
B B1 1 6 5 4 D
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on Resistance : RON=1 (Typ.), (IB=5mA)
A
2 3
DIM A A1 B
B1 C D G H
MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 +
0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating
)
H
C
C
SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg
RATING 50 20 25 300 60 200 150 -55 150
UNIT V V V mA mA mW
1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1
G
T
T
EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR
US6
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4
Marking
6 5
Type Name
4
Q1
Q2
H
1 2 3
hFE Rank
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time Note : hFE Classification B: 350 1200 SYMBOL ICBO IEBO hFE VCE(sat) VBE fT Cob ton tstg tf
)
TEST CONDITION VCB=50V, IE=0 VEB=25V, IC=0 VCE=2V, IC=4mA IC=30mA, IB=3mA VCE=2V, IC=4mA VCE=6V, IC=4mA VCB=10V, IE=0, f=1MHz
OUTPUT INPU...
