IXFQ30N50P

Advance Technical Information PolarHVTM Power HiPerFET MOSFET N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS VDSS ID25 RDS(on) trr = 500 V = 30 A = 200 mΩ < 200 ns www.DataSheet4U.com TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 30 75 30 40 1.2 10 460 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C °C G G G D S (TAB) TO-247 AD (IXFH) (TAB) TO-268 (IXFT) S D (TAB) PLUS220 (IXFV) 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Mounting torque (TO-247, TO-3P) TO-247 TO-268 PLUS220, PLUS220SMD TO-3P Characteristic Values Min. Typ. Max. 500 3.0 300 260 Md Weight 1.13/10 Nm/lb.in. 6 5 4 5.5 g g g g D S D (TAB) PLUS220 SMD(IXFV..S) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V G S V 5.0 ± 100 V nA µA µA mΩ G = Gate S = Source D (TAB) D = Drain TAB = Drain TJ = 125°C 165 25 250 200 VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Features z International standard...