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BAT854SW Dataheets PDF



Part Number BAT854SW
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description Schottky barrier (double) diodes
Datasheet BAT854SW DatasheetBAT854SW Datasheet (PDF)

DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET halfpage M3D102 BAT854W series Schottky barrier (double) diodes Product specification 2001 Feb 27 Philips Semiconductors Product specification www.DataSheet4U.com Schottky barrier (double) diodes FEATURES • Very low forward voltage • Very low reverse current • Guard ring protected • Very small SMD plastic package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes • Low power consumptio.

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DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET halfpage M3D102 BAT854W series Schottky barrier (double) diodes Product specification 2001 Feb 27 Philips Semiconductors Product specification www.DataSheet4U.com Schottky barrier (double) diodes FEATURES • Very low forward voltage • Very low reverse current • Guard ring protected • Very small SMD plastic package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes • Low power consumption applications (e.g. hand-held applications). DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT323 very small SMD plastic package. Single diodes and double diodes with different pinning are available. MARKING PINNING PIN BAT854W 1 2 3 BAT854AW 1 2 3 BAT854CW 1 2 3 BAT854SW 1 2 3 a1 k2 k1, a2 a1 a2 k1, k2 Fig.3 k1 k2 a1,a2 a n.c. k Fig.2 SYMBOL BAT854W series 3 1 2 n.c. MLC357 BAT854W single diode configuration (symbol). 3 1 2 MLC360 BAT854AW diode configuration (symbol). 3 1 2 MLC359 TYPE NUMBER BAT854W BAT854AW BAT854CW BAT854SW MARKING CODE 81 82 83 84 handbook, 2 columns 3 Fig.4 BAT854CW diode configuration (symbol). 1 Top view 2 MBC870 3 1 2 MLC358 Fig.1 Simplified outline SOT323 and pin configuration. Fig.5 BAT854SW diode configuration (symbol). 2001 Feb 27 2 Philips Semiconductors Product specification www.DataSheet4U.com Schottky barrier (double) diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 t = 8.3 ms half sinewave; JEDEC method − − − − −65 − −65 PARAMETER CONDITIONS BAT854W series MIN. MAX. UNIT 40 200 300 1 +150 150 +150 V mA mA A °C °C °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL Per diode VF continuous forward voltage see Fig.6 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR Cd Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT323 standard mounting conditions. PARAMETER CONDITIONS VALUE 625 UNIT K/W continuous reverse current diode capacitance VR = 25 V; note 1; see Fig.7 VR = 1 V; f = 1 MHz; see Fig.8 200 260 340 − − − − − − − 420 550 0.5 20 mV mV mV mV mV µA pF PARAMETER CONDITIONS TYP. MAX. UNIT thermal resistance from junction to ambient note 1 2001 Feb 27 3 Philips Semiconductors Product specification www.DataSheet4U.com Schottky barrier (double) diodes GRAPHICAL DATA 103 handbook, halfpage IF (mA) 102 MLD546 BAT854W series 103 handbook, halfpage IR (µA) 102 (2) (1) MLD547 10 10 (1) (2) (3) 1 1 (3) 10−1 0 0.4 0.8 VF (V) 1.2 10−1 0 10 20 30 VR (V) 40 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.6 Forward current as a function of forward voltage; typical values. Fig.7 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 20 Cd MLD548 (pF) 16 12 8 4 0 0 10 20 30 VR (V) 40 f = 1 MHz; Tamb = 25 °C. Fig.8 Diode capacitance as a function of reverse voltage; typical values. 2001 Feb 27 4 Philips Semiconductors Product specification www.DataSheet4U.com Schottky barrier (double) diodes PACKAGE OUTLINE Plastic surface mounted package; 3 leads BAT854W series SOT323 D B E A X y HE v M A 3 Q A A1 c 1 e1 e bp 2 w M B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2001 Feb 27 5 Philips Semiconductors Product specification www.DataSheet4U.com Schottky barrier (double) diodes DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1) BAT854W series This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with t.


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