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M3D102
BAT854W series Schottky barrier (double) diodes
Product specification 2001 Feb 27
Philips Semiconductors
Product specification
www.DataSheet4U.com
Schottky barrier (double) diodes
FEATURES • Very low forward voltage • Very low reverse current • Guard ring protected • Very small SMD plastic package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes • Low power consumption applications (e.g. hand-held applications). DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT323 very small SMD plastic package. Single diodes and double diodes with different pinning are available. MARKING PINNING PIN BAT854W 1 2 3 BAT854AW 1 2 3 BAT854CW 1 2 3 BAT854SW 1 2 3 a1 k2 k1, a2 a1 a2 k1, k2 Fig.3 k1 k2 a1,a2 a n.c. k Fig.2 SYMBOL
BAT854W series
3 1 2 n.c.
MLC357
BAT854W single diode configuration (symbol).
3 1 2
MLC360
BAT854AW diode configuration (symbol).
3 1 2
MLC359
TYPE NUMBER BAT854W BAT854AW BAT854CW BAT854SW
MARKING CODE 81 82 83 84
handbook, 2 columns
3
Fig.4
BAT854CW diode configuration (symbol).
1 Top view
2
MBC870
3 1 2
MLC358
Fig.1
Simplified outline SOT323 and pin configuration.
Fig.5
BAT854SW diode configuration (symbol).
2001 Feb 27
2
Philips Semiconductors
Product specification
www.DataSheet4U.com
Schottky barrier (double) diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 t = 8.3 ms half sinewave; JEDEC method − − − − −65 − −65 PARAMETER CONDITIONS
BAT854W series
MIN.
MAX.
UNIT
40 200 300 1 +150 150 +150
V mA mA A °C °C °C
ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL Per diode VF continuous forward voltage see Fig.6 IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR Cd Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT323 standard mounting conditions. PARAMETER CONDITIONS VALUE 625 UNIT K/W continuous reverse current diode capacitance VR = 25 V; note 1; see Fig.7 VR = 1 V; f = 1 MHz; see Fig.8 200 260 340 − − − − − − − 420 550 0.5 20 mV mV mV mV mV µA pF PARAMETER CONDITIONS TYP. MAX. UNIT
thermal resistance from junction to ambient note 1
2001 Feb 27
3
Philips Semiconductors
Product specification
www.DataSheet4U.com
Schottky barrier (double) diodes
GRAPHICAL DATA
103 handbook, halfpage IF (mA) 102
MLD546
BAT854W series
103 handbook, halfpage IR (µA) 102
(2) (1)
MLD547
10
10
(1)
(2)
(3)
1
1
(3)
10−1
0
0.4
0.8
VF (V)
1.2
10−1
0
10
20
30
VR (V)
40
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C.
Fig.6
Forward current as a function of forward voltage; typical values.
Fig.7
Reverse current as a function of reverse voltage; typical values.
handbook, halfpage
20 Cd
MLD548
(pF) 16
12
8
4
0 0 10 20 30 VR (V) 40
f = 1 MHz; Tamb = 25 °C.
Fig.8
Diode capacitance as a function of reverse voltage; typical values.
2001 Feb 27
4
Philips Semiconductors
Product specification
www.DataSheet4U.com
Schottky barrier (double) diodes
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BAT854W series
SOT323
D
B
E
A
X
y
HE
v M A
3
Q
A
A1 c
1
e1 e bp
2
w M B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2001 Feb 27
5
Philips Semiconductors
Product specification
www.DataSheet4U.com
Schottky barrier (double) diodes
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
BAT854W series
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with t.