PolarHV HiPerFET Power MOSFET
Advance Technical Information
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic...
Description
Advance Technical Information
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK 80N50P IXFX 80N50P
VDSS ID25 trr
RDS(on)
= 500 V = 80 A < 65 mΩ < 200 ns
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TO-264 AA (IXFK) Symbol VDSS VDGR VGSM VGSM ID25 IL IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force Mounting torque (TO-264) TO-264 PLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 500 500 ± 40 ± 30 80 75 200 80 80 305 10 1040 -55 ... +150 150 -55 ... +150 300 260 20..120/4.5..25 V V V V A A A A mJ J V/ns W °C °C °C °C °C N/lb
D S
G D S
D (TAB)
PLUS247 (IXFX)
D (TAB)
G = Gate D = Drain
S = Source Tab = Collector
Features
z z
1.13/10 Nm/lb.in. 10 6 g g
z
Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 500 μA VDS = VGS, ID = 8 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 TJ = 125°C
Characteristic Values Min. Typ. Max. 500 3.0 5.0 ± 200 25 1 65 V V nA μA mA mΩ
International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
z z z
Easy to mount Space savings High ...
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