IXFR140N20P

Advance Technical Information PolarHTTM HiPerFET IXFR 140N20P Power MOSFET ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated; Fast Intrinsic Diode Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ± 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C 17 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting force Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 300 -55 ... +175 175 -55 ... +150 300 2500 20..120/4.5..20 5 W °C °C °C °C V~ N/lb. g Maximum Ratings 200 200 ± 20 ± 30 75 75 280 60 100 4 10 V V V V A A A A mJ J V/ns G VDSS = 200 V ID25 = 75 A RDS(on) = 22 mΩ ≤ 150 ns trr www.DataSheet4U.com ISOPLUS247 (IXFR) E153432 D S ISOLATED TAB G = Gate S = Source D = Drain Features z z z z z International standard isolated package UL recognized package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages z z Characteristic Values Min. Typ. Max. 200 2.5 5.0 ± 200 25 250 22 V V nA μA μA mΩ mΩ z Easy to mount Space savings High power densit...