K1B5616BA(B)M
Preliminary UtRAM
www.DataSheet4U.com
256Mb (16M x 16 bit) UtRAM
INFORMATION IN THIS DOCUMENT IS PROVID...
K1B5616BA(B)M
Preliminary UtRAM
www.DataSheet4U.com
256Mb (16M x 16 bit) UtRAM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
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-1Revision 0.3 January 2006
K1B5616BA(B)M
Document Title
Preliminary UtRAM
www.DataSheet4U.com
16Mx16 bit Synchronous Burst Uni-
Transistor Random Access Memory
Revision History
Revision No.
0.0
History
Initial - Design target
Draft Date
July 29, 2005
Remark
Preliminary
0.1
Revised September 13, 2005 - Added ADV interrupt comment in Burst READ(ADV Interrupt) and Burst WRITE(ADV Interrupt). - Changed ICC3 latency in test conditions from latency 3 to latency 5. - Defined DC...