IRG4P254S

PD -91591A IRG4P254S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package C G E n-channel VCES = 250V VCE(on) typ. = 1.32V @VGE = 15V, IC = 55A Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions High Power density Lower conduction losses than similarly rated MOSFET Lower Gate Charge than equivalent MOSFET Simple Gate Drive characteristics compared to Thyristors Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Curren...