KMA5D8DP20Q

SEMICONDUCTOR TECHNICAL DATA General Description Battery Packs and Battery-powered portable equipment applications. It’s mainly suitable for use as a load switch in battery powered applications and protection in battery packs. D KMA5D8DP20Q Dual P-CH Trench MOSFET www.DataSheet4U.com H T P G L FEATURES VDSS=-20V, ID=-5.8A. Drain-Source ON Resistance. : RDS(ON)=36m (Max.) @ VGS=-4.5V. : RDS(ON)=62m (Max.) @ VGS=-2.5V. 8 5 B1 B 1 4 A DIM MILLIMETERS _ 0.1 A 4.9 + _ 0.2 B 6.0 + _ 0.1 B1 3.9 + _ 0.065 D 0.445 + _ 0.075 G 0.175 + _ 0.2 H 1.55 + _ 0.215 L 0.715 + P 1.27 BSC T 0.254 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current ) SYMBOL VDSS VGSS ID * IDP PD * Tj Tstg RthJA * RATING -20 12 -5.8 A -24 2.0 W 0.8 150 -55 150 62.5 /W UNIT V V FLP-8 Pulsed (Note2) Drain Power Dissipation Ta=25 Ta=100 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient * : Surface Mounted on 1 1 Board, t 10sec. PIN CONNECTION (TOP VIEW) D1 D1 D2 D2 S1 G1 S2 G2 1 8 D1 D1 D2 D2 S1 S2 G1 G2 2 7 3 6 4 5 2006. 2. 23 Revision No : 2 1/5 KMA5D8DP20Q www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic (Note 3) ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL BVDSS IDSS Vth IGSS RDS(ON) ID=-250 A, VGS=0V, -20 -0.6 (Note 2) (Note 2) - 29 49 ...