PBSS305ND

PBSS305ND 100 V, 3 A NPN low VCEsat (BISS) transistor Rev. 01 — 10 April 2006 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PD. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter Automotive applications 1.4 Quick reference data Table 1. VCEO IC ICM RCEsat [1] [2] Quick reference data Conditions open base [1] Symbol Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Min [2] Typ 73 Max 100 3 4 95 Unit V A A mΩ single pulse; tp ≤ 1 ms IC = 2 A; IB = 200 mA - Device mounted on a ceramic PCB, Al2O3, standard footprint. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBSS305ND 100 V, 3 A NPN low VCEsat (BISS) transistor www.DataSheet4U.com 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collect...