Power Transistors
2SD1457, 2SD1457A
Silicon NPN triple diffusion planar type Darlington
For power amplification
15.0±0....
Power
Transistors
2SD1457, 2SD1457A
Silicon
NPN triple diffusion planar type Darlington
For power amplification
15.0±0.3 11.0±0.2
www.DataSheet4U.com
Unit: mm
5.0±0.2 3.2
s Features
q q q
16.2±0.5 12.5 3.5 Solder Dip
High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 200 150 200 5 10 6 60 3 150 –55 to +150 Unit V
0.7
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1457 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
emitter voltage 2SD1457A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W
B
1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a)
Internal Connection
C
˚C ˚C
E
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency
(TC=25˚C)
Symbol ICBO VCEO(sus) VEBO hFE* VCE(sat) VBE(sat) fT Conditions VCB = 200V, IE = 0 IC = 2A, L = 10mH IE = 0.1A, IC = 0 VCE = 2V, IC = 2A IC = 3A, IB = 0.06A IC = 3A, IB = 0.06A VCE = 10V, IC = 0.5A, f = 1MHz 15 150 5 700 10000 1.5 2.5 V V MHz min typ max 100 Unit µA V V
*h
FE
Rank classification
Q P O
Rank ...
