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STF4N150 Dataheets PDF



Part Number STF4N150
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Very High Voltage PowerMESH MOSFET
Datasheet STF4N150 DatasheetSTF4N150 Datasheet (PDF)

STP4N150 - STF4N150 www.DataSheet4U.com STW4N150 N-CHANNEL 1500V - 5Ω - 4A TO-220/TO-220FP/TO-247 Very High Voltage PowerMESH™ MOSFET PRODUCT PREVIEW Table 1: General Features TYPE STF4N150 STP4N150 STW4N150 s s s s s Figure 1: Package ID 4 A (*) 4A 4A Pw 40 W 160 W 160 W 3 1 2 VDSS 1500 V 1500 V 1500 V RDS(on) <7Ω <7Ω <7Ω TYPICAL RDS(on) = 5 Ω AVALANCHE RUGGEDNESS GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES HIGH SPEED SWITCHING 3 1 2 TO-220 TO-220FP DESCRIPTION Using the well.

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STP4N150 - STF4N150 www.DataSheet4U.com STW4N150 N-CHANNEL 1500V - 5Ω - 4A TO-220/TO-220FP/TO-247 Very High Voltage PowerMESH™ MOSFET PRODUCT PREVIEW Table 1: General Features TYPE STF4N150 STP4N150 STW4N150 s s s s s Figure 1: Package ID 4 A (*) 4A 4A Pw 40 W 160 W 160 W 3 1 2 VDSS 1500 V 1500 V 1500 V RDS(on) <7Ω <7Ω <7Ω TYPICAL RDS(on) = 5 Ω AVALANCHE RUGGEDNESS GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES HIGH SPEED SWITCHING 3 1 2 TO-220 TO-220FP DESCRIPTION Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. 3 2 1 TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS s SWITCH MODE POWER SUPPLIES Table 2: Order Codes SALES TYPE STF4N150 STP4N150 STW4N150 MARKING F4N150 P4N150 W4N150 PACKAGE TO-220FP TO-220 TO-247 PACKAGING TUBE TUBE TUBE Rev. 1 March 2005 This is preliminary information on a new product now in development. Details are subject to change without notice. 1/9 STP4N150 - STF4N150 - STW4N150 Table 3: Absolute Maximum ratings Symbol Parameter STP4N150 STW4N150 www.DataSheet4U.com Value STF4N150 Unit VDS VDGR VGS ID ID IDM ( ) PTOT VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 4 2.5 12 160 1 - 1500 1500 ± 30 4 (*) 2.5 (*) 12 (*) 40 0.24 2500 -55 to 150 -55 to 150 V V V A A A W W/°C V °C °C ( ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220 Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 0.78 62.5 TO-220FP 3.1 TO-247 0.78 50 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On /Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating,TC = 125°C VGS = ± 30 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2 A 3 4 5 Min. 1500 10 500 ± 100 5 7 Typ. Max. Unit V µA µA nA V Ω 2/9 STP4N150 - STF4N150 - STW4N150 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VD.


NTD6600N STF4N150 STP4N150


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