Document
STP4N150 - STF4N150 www.DataSheet4U.com STW4N150
N-CHANNEL 1500V - 5Ω - 4A TO-220/TO-220FP/TO-247 Very High Voltage PowerMESH™ MOSFET
PRODUCT PREVIEW
Table 1: General Features
TYPE STF4N150 STP4N150 STW4N150
s s s s s
Figure 1: Package
ID 4 A (*) 4A 4A Pw 40 W 160 W 160 W
3 1 2
VDSS 1500 V 1500 V 1500 V
RDS(on) <7Ω <7Ω <7Ω
TYPICAL RDS(on) = 5 Ω AVALANCHE RUGGEDNESS GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES HIGH SPEED SWITCHING
3 1 2
TO-220
TO-220FP
DESCRIPTION Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
3 2 1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS s SWITCH MODE POWER SUPPLIES
Table 2: Order Codes
SALES TYPE STF4N150 STP4N150 STW4N150 MARKING F4N150 P4N150 W4N150 PACKAGE TO-220FP TO-220 TO-247 PACKAGING TUBE TUBE TUBE
Rev. 1 March 2005
This is preliminary information on a new product now in development. Details are subject to change without notice.
1/9
STP4N150 - STF4N150 - STW4N150
Table 3: Absolute Maximum ratings
Symbol Parameter
STP4N150 STW4N150
www.DataSheet4U.com
Value
STF4N150
Unit
VDS VDGR VGS ID ID IDM ( ) PTOT VISO Tj Tstg
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 4 2.5 12 160 1 -
1500 1500 ± 30 4 (*) 2.5 (*) 12 (*) 40 0.24 2500 -55 to 150 -55 to 150
V V V A A A W W/°C V °C °C
( ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220 Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 0.78 62.5 TO-220FP 3.1 TO-247 0.78 50 °C/W °C/W
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On /Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating,TC = 125°C VGS = ± 30 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2 A 3 4 5 Min. 1500 10 500 ± 100 5 7 Typ. Max. Unit V µA µA nA V Ω
2/9
STP4N150 - STF4N150 - STW4N150
ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic
Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VD.