IXTQ16N50P

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA16N50P IXTP16N50P IXTQ16N50P VDSS = ID25 = ≤ RDS(on) 500V 16A 400mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-3P,TO-220) TO-263 TO-220 TO-3P Maximum Ratings 500 V 500 V ±30 V ±40 V 16 A 35 A 16 A 750 mJ 10 V/ns 300 W - 55 ... +150 150 - 55 ... +150 300 260 1.13/10 2.5 3.0 5.5 °C °C °C °C °C Nm/lb.in. g g g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.5 V ±100 nA 5 μA 50 μA 400 mΩ © 2009 IXYS CORPORATION, All Rights Reserved G S TO-220 (IXTP) (TAB) G DS TO-3P (IXTQ) (TAB) G DS (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International Standard Packages z Avalanche Rated z Fast Intrinsic Diode z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z Switched-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC ...