NTMFS4834N

NTMFS4834N Power MOSFET 30 V, 130 A, Single N−Channel, SO−8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices* V(BR)DSS 30 V http://onsemi.com CPU Power Delivery DC−DC Converters www.DataSheet4U.com Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 20 21 15 2.31 13 9.5 0.9 130 93 86.2 260 −55 to +150 71 6 512 W A °C A V/ns mJ W A W A Unit V V A Applications RDS(ON) MAX 3.0 mW @ 10 V 4.0 mW @ 4.5 V ID MAX 130 A D (5,6) G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM D 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G D 4834N AYWWG G D D Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 32 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) A = Assembly Location Y = ...