NTD4808N

NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices V(BR)DSS http://onsemi.com RDS(ON) MAX 8.0 mW @ 10 V ID MAX 63 A CPU Power Delivery DC−DC Converters www.DataSheet4U.com Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 20 12 9.5 2.0 9.8 7.5 1.3 63 49 54.6 126 45 −55 to +175 45 6 144.5 W A A °C A V/ns mJ W A W Unit V V A Applications 30 V 12.4 mW @ 4.5 V D G S N−CHANNEL MOSFET 4 4 4 A 1 2 3 DPAK CASE 369C STYLE 2 1 2 3 1 2 3 3 IPAK DPAK (STRAIGHT LEAD) CASE 369D CASE 369AC STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 08NG 4 Drain YWW 48 08NG 4 Drain YWW 48 08NG Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (VDD = 30 V, VGS = ...