NTMFS4841N

NTMFS4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device V(BR)DSS 30 V http://onsemi.com Applications RDS(ON) MAX 7.0 mW @ 10 V 11.4 mW @ 4.5 V ID MAX 57 A www.DataSheet4U.com CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C PD IDM TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 20 13.1 9.5 2.17 8.3 6 0.87 57 41 41.7 115 −55 to +150 35 6 180 W A °C A V/ns mJ W A W A Unit V V A D (5,6) G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM D 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G 4841N AYWWG G D D D Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IL = 19 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) A = Assembly Location Y = Year WW = Work Week G = Pb−Free Pac...