NTMFS4839N

NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices V(BR)DSS 30 V http://onsemi.com Applications RDS(ON) MAX 5.5 mW @ 10 V 9.5 mW @ 4.5 V ID MAX 66 A www.DataSheet4U.com CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current TA = 25°C TA = 85°C TA = 25°C TA = 25°C Steady State TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 15 11 2.17 9.5 7.0 0.87 66 48 41.7 132 −55 to +150 35 6 180.5 W A °C A V/ns mJ W A W Unit V V D (5,6) G (4) A S (1,2,3) N−CHANNEL MOSFET A MARKING DIAGRAM D 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G 4839N AYWWG G D D D Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 19 Apk, L = 1.0 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8” from case for 10 s) A = Assembly Location Y = Year WW = Work Week G ...