IRFSL3307ZPBF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97214D IRFB3307ZPbF IRFS3307ZPbF IRFSL3307ZPbF HEXFET® Power MOSFET D VDSS 75V RDS(on) typ. 4.6mΩ cmax. 5.8mΩ G ID (Silicon Limited) 128A S ID (Package Limited) 120A D DD S D G TO-220AB IRFB3307ZPbF S G D2Pak IRFS3307ZPbF S D G TO-262 IRFSL3307ZPbF G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) dPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÃdAvalanche Current gRepetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter kJunction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunction-to-A...