HEXFET Power MOSFET
Applications l High Efficiency Synchronous Rectification in
SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Description
Applications l High Efficiency Synchronous Rectification in
SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness l Fully Characterized Capacitance and
Avalanche SOA l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97214D
IRFB3307ZPbF IRFS3307ZPbF IRFSL3307ZPbF
HEXFET® Power MOSFET
D VDSS
75V
RDS(on) typ.
4.6mΩ
cmax.
5.8mΩ
G
ID (Silicon Limited)
128A
S ID (Package Limited)
120A
D DD
S D G
TO-220AB IRFB3307ZPbF
S G
D2Pak IRFS3307ZPbF
S D G
TO-262 IRFSL3307ZPbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
eSingle Pulse Avalanche Energy ÃdAvalanche Current gRepetitive Avalanche Energy
Thermal Resistance
Symbol RθJC
Parameter
kJunction-to-Case
RθCS
RθJA RθJA
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220 jkJunction-to-A...
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