Super Junction MOSFET
APT31N80JC3
800V 31A 0.145Ω
Super Junction MOSFET
C O OLMOS
Power Semiconductors
S G D
S
SO
2 T-
27
• Ultra low R...
Description
APT31N80JC3
800V 31A 0.145Ω
Super Junction MOSFET
C O OLMOS
Power Semiconductors
S G D
S
SO
2 T-
27
Ultra low RDS(ON) Ultra Low Gate Charge, Qg Popular SOT-227 Package
Low Miller Capacitance
"UL Recognized"
Avalanche Energy Rated N-Channel Enhancement Mode
ISOTOP ®
D G S
www.DataSheet4U.com Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
All Ratings: TC = 25°C unless otherwise specified.
APT31N80JC3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
800 31 93 ±20 ±30 833 6.67 -55 to 150 300 50 17 0.5
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 640V, ID = 31A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy
7 7
Volts Watts W/°C °C V/ns Amps mJ
IAR EAR EAS
Single Pulse Avalanche Energy
670
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.125 0.5 0.145 25 25...
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