MW6S010GNR1

Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain — 18 dB Drain Efficiency — 32% IMD — - 37 dBc Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters On - Chip RF Feedback for Broadband Stability www.DataSheet4U.com Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection 200°C Capable Plastic Package N Suffix Indicates Lead - Free Terminations. RoHS Compliant. In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MW6S010NR1 CASE 1265A - 02, STYLE 1 TO - 270- 2 GULL PLASTIC MW6S010GNR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +12 61.4 0.35 - 65 to +175 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteris...