MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF18090B/D
The RF MOSFET Line
RF Power Field Effect Tr...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF18090B/D
The RF MOSFET Line
RF Power Field Effect
Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. GSM and EDGE Performances, Full Frequency Band Power Gain — 13.5 dB (Typ) @ 90 Watts (CW) Efficiency — 45% (Typ) @ 90 Watts (CW) Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness www.DataSheet4U.com Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF18090B MRF18090BS
1.90 – 1.99 GHz, 90 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETS
CASE 465B–03, STYLE 1 (NI–880) (MRF18090B)
CASE 465C–02, STYLE 1 (NI–880S) (MRF18090BS)
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, –0.5 250 1.43 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum)
THERMAL CHARACTERISTICS
Ch...