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MRF18090BSR3

Freescale Semiconductor
Part Number MRF18090BSR3
Manufacturer Freescale Semiconductor
Description LATERAL N-CHANNEL RF POWER MOSFETs
Published May 31, 2010
Detailed Description Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors N ...
Datasheet PDF File MRF18090BSR3 PDF File

MRF18090BSR3
MRF18090BSR3

Overview
Freescale Semiconductor Technical Data Document Number: MRF18090B Rev.
7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.
9 to 2.
0 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in class AB for GSM and EDGE cellular radio applications.
• GSM and EDGE Performances, Full Frequency Band Power Gain — 13.
5 dB (Typ) @ 90 Watts (CW) Efficiency — 45% (Typ) @ 90 Watts (CW) • Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated E...


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