Freescale Semiconductor Technical Data
Document Number: MRF5S9101N Rev. 4, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application Typical GSM Performance: VDD = 2...
