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MRF5S9080NR1 Dataheets PDF



Part Number MRF5S9080NR1
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
Datasheet MRF5S9080NR1 DatasheetMRF5S9080NR1 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MRF5S9080N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz). Power Gain — 18.5 dB Drain .

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