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2SC5979 Dataheets PDF



Part Number 2SC5979
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Epitaxial Planar Silicon Transistor
Datasheet 2SC5979 Datasheet2SC5979 Datasheet (PDF)

Ordering number : ENN8070 2SC5979 2SC5979 Applications • NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features www.DataSheet4U.com • • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-.

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Ordering number : ENN8070 2SC5979 2SC5979 Applications • NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features www.DataSheet4U.com • • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions Ratings 100 100 50 6 5 7.5 1.2 0.8 15 150 --55 to +150 Unit V V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA 250 Conditions Ratings min typ max 0.1 0.1 400 Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21405EA TS IM TB-00000319 No.8070-1/4 2SC5979 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=10V, IC=500mA VCB=10V, f=1MHz IC=1A, IB=50mA IC=2A, IB=100mA IC=2A, IB=100mA IC=10µA, IE=0 IC=100µA, RBE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 100 100 50 6 35 300 20 Ratings min typ 400 15 70 120 0.88 105 180 1.2 max Unit MHz pF mV mV V V V V V ns ns ns Package Dimensions unit : mm 2045B www.DataSheet4U.com 6.5 5.0 4 1.5 Package Dimensions unit : mm 2044B 2.3 0.5 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.8 1.6 0.6 1 2 3 0.5 1 0.6 7.5 0.8 2 3 2.5 1.2 0.85 0.5 1.2 0.85 0.7 5.5 7.0 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 2.3 2.3 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR10 50Ω IB1 OUTPUT IB2 RB RL + + 470µF VCC=25V 100µF VBE= --5V IC=10IB1= --10IB2=1A No.8070-2/4 2SC5979 5.0 4.5 IC -- VCE 10 0 mA 5 IC -- VBE VCE=2V 80mA 60mA 40mA 30mA Collector Current, IC -- A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector Current, IC -- A 4.0 4 3 20mA 15mA 10mA 2 1 IB=0 0.9 1.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Collector-to-Emitter Voltage, VCE -- V 1000 7 IT08228 1000 7 hFE -- IC Base-to-Emitter Voltage, VBE -- V Ta= 75° C 25° C --25 °C 5mA IT08229 f T -- IC VCE=2V Gain-Bandwidth Product, f T -- MHz Ta=75°C --25°C 25°C VCE=10V www.DataSheet4U.com 5 DC Current Gain, hFE 3 2 5 3 2 100 7 5 3 2 10 0.01 100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT08230 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 7 5 Cob -- VCB Collector Current, IC -- A 7 5 7 10 IT08231 VCE(sat) -- IC f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 5 3 2 IC / IB=20 3 2 0.1 7 5 3 2 = Ta °C 75 --2 C 5° 10 7 5 0.1 °C 25 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT08233 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 7 5 5 7 100 IT08232 0.01 0.01 VCE(sat) -- IC Collector Current, IC -- A 3 VBE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT08234 1.0 Ta= --25°C 75°C 7 5 75° Ta= C 5 --2 °C 25°C C 25° 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 IT08235 Collector Current, IC -- A Collector Current, IC -- A .


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