ARF477FL

Common Source Push-Pull Pair D G S S G S S D ARF477FL ARF477FL RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR 165V 400W 100MHz The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 100 MHz. Specified 150 Volt, 65 MHz Characteristics: Output Power = 400 Watts www.DataSheet4U.com High Performance Push-Pull RF Package. High Voltage Breakdown and Large SOA for Superior Ruggedness. Gain = 15dB (Class AB) Efficiency = 50% min Low Thermal Resistance. RoHS Compliant All Ratings: TC = 25°C unless otherwise specified. Ratings 500 500 15 ±30 750 -55 to 175 300 Unit V A V W °C MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C (each device) Gate-Source Voltage Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063” from Case for 10 Sec. Static Electrical Characteristics Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1/gfa2 VGS(TH) VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Voltage 1 (ID(ON) = 7.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 7.5A) Forward Trans...