SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB7D0N65P1/F1
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB7D0N65P1
Thi...
SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB7D0N65P1/F1
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
KHB7D0N65P1
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
A
O C F
E
G B Q
I
FEATURES
VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V
K M L J D N N
P
Qg(typ.)= 32nC
www.DataSheet4U.com
H
MAXIMUM RATING (Tc=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25
)
SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 160 1.28 150 -55 150
N
DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q
1
2
3
RATING KHB7D0N65P1 KHB7D0N65F1 650 30 7 4.2 28 212 1.6 4.5 52 0.42 7* 4.2* 28*
UNIT V V
1. GATE 2. DRAIN 3. SOURCE
TO-220AB
KHB7D0N65F1
A
A F O
C
mJ mJ V/ns W W/
E G P
B
K L J D M M H Q
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junct...
