3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module
TQM7M5012
Advanced Data Sheet
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Features
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Description
TQM7M5012
Advanced Data Sheet
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Features
Ultra-small 5x5mm form factor GSM/EDGE Multi-Mode Capability - 90 dBm Typical Rx Noise - 38 dB Typical ACPR (200KHz) - 66 dB Typical ACPR (400 KHz) - 76 dB Typical ACPR (600 KHz) 1% Typical EVM rms > 50 dB Typical Dynamic Range GPRS Class 12 Internally Matched Input and Output RoHS, MSL260C pending
Functional Block Diagram
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Product Description
The TQM7M5012 is a ultra-small (5x5mm), GSM/EDGE Polar PAM for handset applications. This module has been optimized for excellent EDGE efficiency, Rx band noise performance, ACPR and EVM in an open loop polar modulation environment at EDGE class E2+ operation while maintaining high GSM/GPRS efficiency. High reliability is assured by utilizing TriQuint’s 3rd generation InGaP HBT technology and by TriQuint’s proven module design techniques. The low profile, ultra-small package is enabled via TriQuint’s CuFlipTM technology.
Applications
GSM/EDGE/WEDGE Handsets GSM/EDGE/WEDGE Wireless Cards
Package Style
Top View
Electrical Specifications
Parameter GSM Pout Efficiency Pin EDGE Pout Efficiency Pin
850 Band
Typ 35 53 6 29 25 6
900 Band
Typ 34.7 55 6 29 25 6
DCS Band
Typ 33 49 6 28 25 6
PCS Band
Typ 32.5 50 6 28 26 6
Units dBm % dBm dBm % dBm
Package Size: LGA 5 x 5 x 1 mm
Advanced Data Sheet: Subject to change without notice
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