SSM9585GM

SSM9585GM P-channel Enhancement-mode Power MOSFET Simple drive requirement Lower gate charge Fast switching characteristics Pb-free; RoHS compliant. D BVDSS R DS(ON) ID -80V 180mΩ -2.7A G S DESCRIPTION D www.DataSheet4U.com Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D D D G The SSM9585GM is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications. This device is suitable for low voltage applications such as DC/DC converters. SO-8 S S S ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -80 ±25 -2.7 -2.1 -20 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol RΘj-a Parameter Maximum Thermal Resistance Junction-ambient 3 Value 50 Unit °C/W 3/21/2005 Rev.2.01 www.SiliconStandard.com 1 of 5 SSM9585GM ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -80 -1 - Typ. -0.07 5 18 5 7 10 6 67 30 140 98 Max. Units 180 200 -3 -1 -25 ±100 28 V V/°C mΩ mΩ V S uA u...