SSM9575M

SSM9575M/GM P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Low on-resistance Fast switching characteristics D D D D BV DSS R DS(ON) ID G -60V 90mΩ -4A SO-8 S S S Description www.DataSheet4U.com Advanced Power D MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SSM9575M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. This device is available with Pb-free lead finish (second-level interconnect) as SSM9575GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -60 ± 25 -4 -3.2 -20 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit °C/W 12/02/2004 Rev.2.01 www.SiliconStandard.com 1 of 5 SSM9575M/GM Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -60 -1 - Typ. -0.04 7 18 5 7 12 5 68 32 165 125 ...